(China (Mainland))
Product Summary
The CY62157ELL-45ZSXI is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. The CY62157ELL-45ZSXI is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The CY62157ELL-45ZSXI also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
Parametrics
CY62157ELL-45ZSXI absolute maximum ratings: (1)Storage Temperature: –65 ℃ to + 150 ℃; (2)Ambient Temperature with Power Applied: –55 ℃ to + 125 ℃; (3)Supply Voltage to Ground Potential: –0.5 V to 6.0 V; (4)DC Voltage Applied to Outputs in High Z State: –0.5 V to 6.0 V; (5)DC Input Voltage: –0.5 V to 6.0 V; (6)Output Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage(MIL-STD-883, Method 3015): > 2001 V; (8)Latch up Current: > 200 mA.
Features
CY62157ELL-45ZSXI features: (1)Very high speed: 45 ns: Industrial: –40 ℃ to +85 ℃; Automotive-E: –40 ℃ to +125 ℃; (2)Wide voltage range: 4.5 V–5.5 V; (3)Ultra low standby power: Typical standby current: 2 μA; Maximum standby current: 8 μA (Industrial); (4)Ultra low active power: Typical active current: 1.8 mA at f = 1 MHz; (5)Ultra low standby power; (6)Easy memory expansion with CE1, CE2 and OE features; (7)Automatic power down when deselected; (8)CMOS for optimum speed and power; (9)Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package.
Diagrams
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 CY62157ELL-45ZSXI |
Cypress Semiconductor |
SRAM 8M ULTRA LO PWR HI SPD SRAM IND |
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CY62157ELL-45ZSXIT |
Cypress Semiconductor |
SRAM 8M ULTRA LO PWR HI SPD SRAM IND |
Data Sheet |
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